inp-based resonant tunneling devices and field-effect transistors (Texas Instruments)
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Texas Instruments
inp-based resonant tunneling devices and field-effect transistors
Inp Based Resonant Tunneling Devices And Field Effect Transistors, supplied by Texas Instruments, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/inp-based+resonant+tunneling+devices+and+field-effect+transistors/inp+based+resonant+tunneling+devices+and+field+effect+transistors/10__1109_slash_ted__2011__2116157-304-17-12
Average 90 stars, based on 1 article reviews
Inp Based Resonant Tunneling Devices And Field Effect Transistors, supplied by Texas Instruments, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/inp-based+resonant+tunneling+devices+and+field-effect+transistors/inp+based+resonant+tunneling+devices+and+field+effect+transistors/10__1109_slash_ted__2011__2116157-304-17-12
Average 90 stars, based on 1 article reviews
inp-based resonant tunneling devices and field-effect transistors - by Bioz Stars,
2026-09
90/100 stars
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other:Article Title: Degradation in InAs–AlSb HEMTs Under Hot-Carrier Stress Article Snippet: InAs–AlSb high-electron mobility transistors stressed with hot carriers may exhibit shifts in the peak transconductance toward more negative gate-voltages.. The devices are most degradation prone in operating conditions with high longitudinal (in the direction of IDS ) electric fields in the channel.. Room-temperature annealing, gate current, and channel-mobility measurements suggest the presence of a metastable defect in the top AlSb layer. |